US20050138934A1 - Optoelectronic component with a peltier cooler - Google Patents

Optoelectronic component with a peltier cooler Download PDF

Info

Publication number
US20050138934A1
US20050138934A1 US10/504,649 US50464905A US2005138934A1 US 20050138934 A1 US20050138934 A1 US 20050138934A1 US 50464905 A US50464905 A US 50464905A US 2005138934 A1 US2005138934 A1 US 2005138934A1
Authority
US
United States
Prior art keywords
optoelectronic
peltier cooler
peltier
assembly
optoelectronic assembly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US10/504,649
Inventor
Martin Weigert
Axel Schubert
Franz Auracher
Karl-Heinz Schlereth
Gustav Muller
Hans-Ludwig Althaus
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micropelt GmbH
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Assigned to INFINEON TECHNOLOGIES AG reassignment INFINEON TECHNOLOGIES AG ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: SCHLERETH, KARL-HEINZ, SCHUBERT, AXEL, ALTHAUS, HANS-LUDWIG, WEIGERT, MARTIN, MULLER, GUSTAV, AURACHER, FRANZ
Publication of US20050138934A1 publication Critical patent/US20050138934A1/en
Assigned to MICROPELT GMBH reassignment MICROPELT GMBH ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: INFINEON TECHNOLOGIES AG
Abandoned legal-status Critical Current

Links

Images

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24Coupling light guides
    • G02B6/42Coupling light guides with opto-electronic elements
    • G02B6/4201Packages, e.g. shape, construction, internal or external details
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24Coupling light guides
    • G02B6/42Coupling light guides with opto-electronic elements
    • G02B6/4201Packages, e.g. shape, construction, internal or external details
    • G02B6/4266Thermal aspects, temperature control or temperature monitoring
    • G02B6/4268Cooling
    • G02B6/4271Cooling with thermo electric cooling
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64Heat extraction or cooling elements
    • H01L33/645Heat extraction or cooling elements the elements being electrically controlled, e.g. Peltier elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/024Arrangements for thermal management
    • H01S5/02407Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H01S5/02415Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling by using a thermo-electric cooler [TEC], e.g. Peltier element
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/102Material of the semiconductor or solid state bodies
    • H01L2924/1025Semiconducting materials
    • H01L2924/10251Elemental semiconductors, i.e. Group IV
    • H01L2924/10253Silicon [Si]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19107Disposition of discrete passive components off-chip wires

Definitions

  • Peltier coolers for stabilizing the temperature of optoelectronic devices.
  • Peltier coolers exploit the Peltier effect, according to which heat is drawn from or fed to the interface between two different conductors when current flows, depending on the current direction.
  • two semiconductor materials having a different conduction type are connected to one another with a readily conductive metal bridge that forms the cooled area.
  • Peltier coolers used for stabilizing the temperature of optoelectronic devices are usually incorporated in a comparatively large housing, for example a so-called butterfly housing, on account of their size.
  • the present invention is based on the object of providing a compact optoelectronic assembly which can be used even in housings of small design.
  • the intention is to enable an as far as possible temperature-insensitive coupling of an optical waveguide to the assembly.
  • the solution according to the invention is distinguished by the fact that the cooling element used is a Peltier cooler having a thickness of less than 1 mm, on which the component is arranged either directly or with interposition of a carrier substrate for the optoelectronic or passive optical component.
  • the Peltier cooler is preferably embodied in silicon, silicon carbide, diamond or another material having high thermal conductivity.
  • the Peltier cooler advantageously has the same or virtually the same coefficient of thermal expansion as the optoelectronic or passive optical component arranged thereon or the carrier substrate, which are usually formed in silicon. Consequently, only very low thermal stresses arise. As a result, it is possible to effect a stable, temperature-insensitive single-mode coupling with an optical waveguide to be coupled.
  • Peltier coolers comprising corresponding materials, in particular silicon-based Peltier coolers, expand to a lesser extent than conventional Peltier coolers, thereby making it possible to keep the position of a radiation source, for instance of a laser, stable with regard to a fiber to be coupled. It is thus possible, e.g. to effect an adjustment at room temperature while the radiation source is being operated in operation at a different temperature.
  • the optoelectronic or passive optical component is arranged directly on the Peltier cooler, the latter additionally performs the functions of a carrier or submount, so that a separate carrier can advantageously be dispensed with. Very compact arrangements thus result.
  • the Peltier coolers used are, in particular, so-called micro-Peltier coolers, having a high cooling capacity in conjunction with a small area and short response times. Production takes place by means of methods appertaining to thin film technology and Microsystems technology. For cost-effective fabrication, the micro-Peltier coolers are processed on standard silicon wafers and then separated. The micro-Peltier coolers have a thickness of less than one millimeter. The edge length is preferably less than 5 mm, and in particular is 1-2 mm.
  • the thermoelectric functional materials are structured vertically and originate for example from the family of bismuth chalcogenides.
  • the solution according to the invention is distinguished by the combination of a micro-Peltier cooler with a small constructional form for an optoelectronic assembly, for instance a small TO constructional form or a comparable small, hermetically sealed constructional form.
  • a micro-Peltier cooler with a small constructional form for an optoelectronic assembly, for instance a small TO constructional form or a comparable small, hermetically sealed constructional form.
  • the arrangement is constructed in such a way that the optical axis of the optoelectronic transmitting and/or receiving element is perpendicular to the Peltier cooler.
  • a particularly compact construction is provided as a result of this.
  • the Peltier cooler is provided with solderable metalization that can be patterned highly precisely by means of photolithographic methods. Via the metalization, it is possible to make contact with optoelectronic components arranged on the Peltier cooler directly. In this case, one contact of the optoelectronic component is soldered for example to metalization on the Peltier cooler, while the other contact is contact-connected by means of a bonding wire.
  • the Peltier cooler furthermore preferably has micromechanical trenches, which serve in particular for receiving an optical fiber.
  • the trenches are preferably V-grooves etched into silicon in the 110 plane. Further structures for instance for self-alignment processes may likewise be formed on the Peltier cooler.
  • additional components may be arranged on the Peltier cooler, for instance an additional monitor diode for monitoring the laser light and/or a temperature diode for monitoring the temperature, and also glass prisms for beam deflection and lenses.
  • the Peltier cooler provides for temperature stabilization of the entire arrangement.
  • constructions of one- or two-dimensional arrays of diodes may also be arranged on the Peltier cooler directly or with interposition of a carrier substrate.
  • the optoelectronic component is preferably a transmitting and/or receiving unit for optical message transmission.
  • An optical component arranged on the Peltier cooler is for example a WDM filter, a multiplexer/demultiplexer or a switch.
  • optical and/or electrical components for example a diode or a thin-film resistor, are integrated directly into the Peltier cooler.
  • the degree of integration of the assembly is increased further as a result of this.
  • a specific Peltier cooler that provides a specific temperature regulation is in each case provided for individual components or component arrangements of the assembly.
  • the individual specific Peltier coolers may in turn be connected to a large, conventional Peltier cooler, the specific Peltier coolers then being responsible for fine regulation.
  • the invention is preferably used in conjunction with passive optical components which inherently have no evolution of heat.
  • the Peltier coolers may in this case also serve for influencing optical signals in a defined manner.
  • a local temperature change that leads to a phase change may be brought about by means of Peltier coolers in particular in the case of optical modulators such as, for example, Mach-Zehnder interferometers or directional couplers.
  • micro-Peltier elements can replace strip heaters used in the prior art in passive optical components appertaining to optoelectronics.
  • a micro-Peltier element is assigned for example to an optical waveguide or optical waveguide arm of an optical modulator, the phase of the light in the optical waveguide or optical waveguide arm being set in a defined manner by means of heating or cooling.
  • a plurality of Peltier elements are arranged in a Peltier array.
  • the Peltier array is assigned for example to an array of passive optical elements, for instance an array of Mach-Zehnder inteferometers, and in each case provides locally for a desired temperature change.
  • FIG. 1 shows a diagrammatic illustration of a TO housing with a silicon chip arranged on a micro-Peltier cooler
  • FIG. 2 shows one beside the other, a transmitting and receiving element in each case arranged in a TO housing in an arrangement in accordance with FIG. 1 ;
  • FIG. 3 shows a plan view of an exemplary embodiment of a transmitting assembly mounted on a Peltier cooler
  • FIG. 4 shows an exemplary embodiment of a VCSEL laser mounted on a micro-Peltier cooler
  • FIG. 5 shows an exemplary embodiment of an edge emitting laser with integrated beam deflection mounted on a micro-Peltier element
  • FIG. 6 shows a detail view of the beam deflection of the arrangement of FIG. 5 ;
  • FIG. 7 shows an arrangement in which an edge emitter laser, rotated through 90°, is coupled to a heat sink by means of a micro-Peltier element
  • FIGS. 8 a - b diagrammatically show the construction of a temperature-stabilized transmitting assembly in accordance with the prior art in side and plan views;
  • FIGS. 9 a - b diagrammatically show the construction of a temperature-stabilized transmitting assembly according to the invention in side and plan views;
  • FIG. 10 shows a micromodule with double beam deflection arranged on a micro-Peltier element
  • FIGS. 11 a - c show a temperature-stabilized transmitting assembly with an edge emitter in side and plan views and with a sectional view of an integrated v-groove formed in an SI chip;
  • FIGS. 12 a - b show an arrangement corresponding to FIGS. 11 a - c with a V-groove integrated into the Peltier element;
  • FIGS. 13 a - d show the arrangement of an edge emitter arranged on a Peltier element with two configurations of the edge emitter
  • FIGS. 14 a - b show the arrangement of a VCSEL laser diode arranged on a Peltier element in side and plan views;
  • FIG. 15 shows a fiber Bragg filter arranged on a Peltier element
  • FIG. 16 diagrammatically shows the arrangement of a passive optical component on a Peltier element
  • FIG. 17 shows the arrangement of a micro-Peltier cooler in a Mach-Zehnder interferometer.
  • FIG. 1 diagrammatically shows an exemplary embodiment of an optoelectronic transmitting and/or receiving element 1 arranged on a micro-Peltier cooler 2 .
  • the transmitting and/or receiving element is formed as a chip 1 having for example a laser, in particular a VCSEL laser, a photodiode or a silicon micromodule with transmitting and monitor diode and optical deflection means.
  • the chip 1 is arranged directly on the micro-Peltier cooler 2 , which in this case simultaneously serves as a carrier substrate (submount). Both are situated in a TO housing 3 , to be precise a TO housing of small design, which has a cap 31 .
  • the optical axis of the chip 1 runs perpendicular to the micro-Peltier cooler 2 .
  • TO (Transistor Outline) housings are standard housings known in the prior art for optical transmitting or receiving modules, the form of which is similar to the housing of a (traditional) transistor but which have a glass window for entry and exit of light at the top side.
  • TO housings There are standardized sizes for TO housings. Small TO housings of the TO46, TO35, TO37 and TO52 standard, for example, are used in the present case, the numerical indication specifying the external diameter.
  • the micro-Peltier element 2 is embodied in silicon and likewise has small dimensions. It has a thickness of less than 1 mm and an edge length of 1-2 mm, for example. As an alternative, the micro-Peltier element 2 may also comprise silicon carbide, diamond or other materials having high thermal conductivity.
  • the cap 31 has a TO window and a fiber coupling 32 and/or a filter element.
  • the micro-Peltier cooler 2 is mounted on a base plate 33 through which pass terminal pins 34 of the TO housing 3 .
  • the chip 1 is contact-connected by means of bonding wires 4 , one bonding wire being led from one contact pin directly to a terminal pad on the top side of the chip 1 , while the other bonding wire is connected to a terminal pad on the top side of the micro-Peltier cooler 2 .
  • the micro-Peltier cooler 2 has solderable metalization in particular gold metalization, which can be patterned highly accurately by means of photolithography.
  • the underside of the chip 1 is contact-connected via the solderable metalization.
  • FIG. 2 shows an arrangement in which two TO assemblies 5 , 6 in accordance with FIG. 1 are arranged one beside the other in a transceiver.
  • a transmitting element 51 is arranged directly on a micro-Peltier cooler 52 ; in the other TO assembly 6 , a receiving element 61 is arranged directly on a micro-Peltier cooler 52 .
  • the distance A is only approximately 5-10 mm on account of the small dimensions of the TO housings. The arrangement may thus be used as a subassembly in an optoelectronic transceiver of small design.
  • FIG. 3 shows an example of the concrete construction of the transmitting assembly of a TO housing in accordance with FIG. 1 .
  • a chip 1 is arranged directly on the micro-Peltier element 2 , said chip having a micromodule with a laser diode, a monitor diode 11 and a temperature diode 12 .
  • the laser diode is concealed by a lens 7 in the plan view illustrated.
  • the illustration likewise shows the respective bonding wires 81 - 86 for making contact with the individual components.
  • the monitor diode 11 serves in a customary manner for detecting and monitoring the power radiated by the laser diode.
  • the temperature diode 12 specifies the temperature of the transmitting diode.
  • the signal generated by the temperature diode 12 serves for regulating the Peltier element 2 , i.e. this is cooled or heated depending on the temperature stabilization to be effected.
  • the use of a separate temperature diode may also be dispensed with and the monitor diode may be used for temperature measurement. It is also pointed out that the components illustrated do not have to be integrated into a micromodule 1 that is then arranged on the micro-Peltier element 2 . Instead, laser diode, monitor diode and temperature diode may in each case also be arranged directly on the micro-Peltier element 2 . In this case, the monitor diode 11 and the temperature diode 12 may be positioned discretely on the silicon Peltier cooler 2 or, in the event of being a silicon diode, may be integrated directly into the silicon Peltier cooler 2 .
  • a diode and/or further components such as a thin film resistor may be integrated in the upper or lower cover of the silicon Peltier cooler 2 .
  • FIG. 4 shows a coaxial construction of a transmitting assembly, a VCSEL laser chip 9 being arranged directly on a micro-Peltier cooler 2 .
  • the upper contact of the laser chip 9 is provided by a bonding wire 4 proceeding from the surface of the micro-Peltier cooler 2 .
  • Further bonding wires connect the contact pins 34 of the TO housing (illustrated incompletely) to contact pads or metalizations on the surface of the micro-Peltier cooler 2 .
  • the micro-Peltier element 2 in turn serves as a submount for the laser chip 9 .
  • FIGS. 5 and 6 show an arrangement that is comparable to the arrangement of FIG. 4 , an edge emitting laser being used instead of a VCSEL laser chip.
  • a beam deflection is integrated in the laser chip 10 , said beam deflection being provided by a crystallographically etched mirror area 11 and deflecting the laterally radiated laser beam perpendicularly upward.
  • FIG. 7 illustrates an edge emitting laser chip 13 arranged in a TO housing (again illustrated only partially) in an arrangement rotated through 90° relative to FIG. 5 .
  • the laser chip 13 is positioned directly on a micro-Peltier element 2 , which is in turn mounted on a heat sink 12 integrated in the TO housing.
  • FIGS. 8 a and 8 b show the known construction of a construction—used for optical data transmission—with an edge emitting laser chip 14 , a monitor diode 15 , a temperature diode 16 (which is embodied for example as a thermistor), a carrier substrate 17 , made in particular, of silicon, on which the above-mentioned elements 14 , 15 , 16 are arranged, a lens 18 , a filter 19 or optical isolator and an optical waveguide 20 , in which light from the laser 14 is coupled.
  • the arrangement is arranged altogether on a common Peltier element 21 , which is in turn coupled to a heat sink 22 . It is disadvantageous that specific thermal regulation of the individual elements cannot be effected in this case.
  • FIGS. 9 a , 9 b show an arrangement in which the laser chip 14 , the monitor diode 15 , the temperature diode 16 and the corresponding carrier substrate 17 are arranged on a specific micro-Peltier cooler 23 .
  • Specific temperature regulation can now be effected.
  • a conventional, large Peltier element may additionally be used for the entire arrangement, in which case the micro-Peltier cooler 23 would then be responsible for fine regulation.
  • the carrier substrate 17 may also be dispensed with and the elements 14 , 15 , 16 may be arranged directly on the micro-Peltier cooler 23 .
  • FIG. 10 shows an exemplary embodiment of a micromodule 24 , which is again arranged on a micro-Peltier cooler 23 formed in silicon.
  • the micromodule has a laser 25 , a monitor diode 26 , a silicon lens 27 and two glass prisms 28 , 29 for double beam deflection.
  • alignment marks may be integrated into the micro-Peltier cooler.
  • the micro-Peltier cooler may also have micromechanical cut-outs for forming receptacle structures for the components.
  • FIG. 10 represents an example of the arrangement of various optical and optoelectronic components on a micro-Peltier cooler.
  • the arrangement is connected to the micro-Peltier cooler by means of an additional submount.
  • FIGS. 11 a - 11 c is similar to the exemplary embodiment of FIGS. 9 a , 9 b , the optical fiber 20 being arranged in a V-groove 31 of silicon chip 30 adjoining the micro-Peltier cooler 23 .
  • the fiber 20 goes directly right into the laser 14 by means of a butt coupling.
  • the light may also be arranged in an integrated waveguide embodied for example using glass on silicon technology. In this case, the integrated waveguide formed on the chip 30 is likewise brought directly right up to the laser 14 .
  • the arrangement illustrated permits a specific cooling only of the component group 14 , 15 , 16 . It is not necessary to arrange the entire assembly on a Peltier element as in the prior art (cf. FIG. 8 ). Since the micro-Peltier cooler 17 is preferably formed from silicon, it has similar thermal properties to the silicon chip 30 . As a result, optical waveguide 20 and laser chip 14 can be aligned with respect to one another without the silicon chip 30 also being temperature-stabilized.
  • the submount 17 arranged on the micro-Peltier cooler 23 additionally performs the function of the silicon chip 30 of FIG. 11 , a V-groove being micromechanically integrated into the submount. If no submount is provided, the V-groove is introduced directly into the micro-Peltier cooler.
  • FIGS. 14 a - 14 d show a construction with an edge emitting laser 14 , into which, in accordance with FIG. 13 c , an etching trench 31 with a mirror area 32 is integrated, through which the light is radiated upward. In the example of FIG. 13 d , this is achieved by means of a mirror area 33 given upside—down mounting of the laser diode 14 .
  • a vertically emitting laser 14 with an active laser region 14 a is mounted on a micro-Peltier cooler 23 by means of a submount 17 or directly.
  • a monitor diode 16 serves for temperature regulation. Such a construction is particularly compact.
  • receiving elements may also be coupled to a micro-Peltier cooler. This may involve receiver diodes whose light-sensitive area is situated on the top side or alternatively on the underside, or else laterally illuminated receiver diodes, in particular those for high data rates above 10 Gbit/s.
  • a silicon avalanche photo diode is advantageous.
  • the signal-to-noise ratio can be improved by means of a temperature regulation.
  • the avalanche factor is temperature-dependent.
  • the individual pixels could be regulated to different temperatures by means of a Peltier array in order thus to compensate for the fluctuations in the gain factor, or to set different gain factors in a specific manner.
  • micro-Peltier cooler 23 is also of interest in conjunction with passive optical components, in particular of a WDM (wavelength division multiplex) system, since they are considerably more compact than conventional arrangements and actually enable specific temperature regulation of individual components.
  • passive optical components for instance filters, multiplexers, must likewise be temperature-stabilized.
  • FIG. 15 a Fabry-Perot filter 34 formed in a waveguide is coupled to a micro-Peltier cooler 23 by means of a submount 17 .
  • FIG. 16 generally shows a diagrammatically illustrated passive optical component 35 on a micro-Peltier cooler 23 , it being possible for a submount 17 additionally to be provided. However, in this case, too, the micro-Peltier cooler may simultaneously serve as a submount.
  • FIG. 17 illustrates a Mach-Zehnder interferometer 36 such as is employed in WDM systems.
  • the signals of a plurality of data channels which are transmitted in an optical waveguide 38 are present at the input 37 of the Mach-Zehnder interferometer 36 .
  • the individual data channels each have a different wavelength.
  • the wavelengths of the data channels lie in the range between 1530 nm and 1570 nm.
  • the channel spacing is 100 GHz, for example.
  • the Mach-Zehnder interferometer 36 operates as a spectral filter.
  • a coupler is present at its input 37 and divides the input signal between two arms 36 a , 36 b of the filter 36 .
  • a phase shifter 39 is connected to the lower arm 36 b .
  • a micro-Peltier element 39 is used as the phase shifter.
  • the waveguide 36 b can be locally cooled or heated by means of a cooling or heating.
  • thermo-optical effect By means of the thermo-optical effect, this process of cooling or heating causes a change in refractive index, so that the optical path length can be set by means of the micro-Peltier element 39 and a phase shift can thus be generated between the signals of the two arms 36 a , 36 b .
  • the filter properties of the filter 36 can be configured as desired within a wide range and be designed for a wide variety of applications.
  • the filter is designed in such a way that, at the output 40 of the Mach-Zehnder interferometer 36 , the signals are distributed between two output arms in a wavelength-dependent manner.
  • Mach-Zehnder interferometer 36 represents part of an attenuator unit.
  • the incoming signals are divided between the two arms 36 a , 36 b and combined again after a phase shift in one arm, as a result of which a defined signal attenuation can be set.
  • FIG. 17 is only a representative example of configurations in which a phase change in a signal is brought about by means of a micro-Peltier cooler.
  • Other examples are directional couplers, optical switches and optical multiplexers/demultiplexers.
  • conventionally used heating electrodes may likewise be replaced by a micro-Peltier element in each case.
  • a micro-Peltier element ensures in this case that a temperature change occurs only in a locally delimited region.

Abstract

The invention relates to an optoelectronic assembly having an optoelectronic or passive optical component and a cooling element for cooling the optoelectronic or passive optical component. According to the invention, the cooling element is a micropeltier cooler, wherein the component is arranged either directly thereon or a carrier substrate is arranged therebetween.

Description

  • It is known to use Peltier coolers for stabilizing the temperature of optoelectronic devices. Peltier coolers exploit the Peltier effect, according to which heat is drawn from or fed to the interface between two different conductors when current flows, depending on the current direction. Usually, two semiconductor materials having a different conduction type are connected to one another with a readily conductive metal bridge that forms the cooled area.
  • The known Peltier coolers used for stabilizing the temperature of optoelectronic devices are usually incorporated in a comparatively large housing, for example a so-called butterfly housing, on account of their size.
  • The present invention is based on the object of providing a compact optoelectronic assembly which can be used even in housings of small design. In addition, the intention is to enable an as far as possible temperature-insensitive coupling of an optical waveguide to the assembly.
  • This object is achieved according to the invention by means of an optoelectronic assembly having the features of claim 1. Preferred advantageous refinements of the invention are provided in the subclaims.
  • Accordingly, the solution according to the invention is distinguished by the fact that the cooling element used is a Peltier cooler having a thickness of less than 1 mm, on which the component is arranged either directly or with interposition of a carrier substrate for the optoelectronic or passive optical component.
  • This results in a very compact construction that makes it possible to integrate the Peltier cooler together with the optoelectronic or passive optical component and also further components, if appropriate, into a hermetically sealed housing of small design. In this case, it is possible to realize very small optoelectronic constructional forms, for example TO constructional forms. In particular, it is possible to realize temperature-stabilized ITU laser sources having a constant wavelength at different ambient temperatures in small constructional forms.
  • The Peltier cooler is preferably embodied in silicon, silicon carbide, diamond or another material having high thermal conductivity. In this case, the Peltier cooler advantageously has the same or virtually the same coefficient of thermal expansion as the optoelectronic or passive optical component arranged thereon or the carrier substrate, which are usually formed in silicon. Consequently, only very low thermal stresses arise. As a result, it is possible to effect a stable, temperature-insensitive single-mode coupling with an optical waveguide to be coupled.
  • Moreover, Peltier coolers comprising corresponding materials, in particular silicon-based Peltier coolers, expand to a lesser extent than conventional Peltier coolers, thereby making it possible to keep the position of a radiation source, for instance of a laser, stable with regard to a fiber to be coupled. It is thus possible, e.g. to effect an adjustment at room temperature while the radiation source is being operated in operation at a different temperature.
  • In the case where the optoelectronic or passive optical component is arranged directly on the Peltier cooler, the latter additionally performs the functions of a carrier or submount, so that a separate carrier can advantageously be dispensed with. Very compact arrangements thus result.
  • The Peltier coolers used are, in particular, so-called micro-Peltier coolers, having a high cooling capacity in conjunction with a small area and short response times. Production takes place by means of methods appertaining to thin film technology and Microsystems technology. For cost-effective fabrication, the micro-Peltier coolers are processed on standard silicon wafers and then separated. The micro-Peltier coolers have a thickness of less than one millimeter. The edge length is preferably less than 5 mm, and in particular is 1-2 mm. The thermoelectric functional materials are structured vertically and originate for example from the family of bismuth chalcogenides.
  • In a preferred refinement, the solution according to the invention is distinguished by the combination of a micro-Peltier cooler with a small constructional form for an optoelectronic assembly, for instance a small TO constructional form or a comparable small, hermetically sealed constructional form. A compact construction of Peltier cooler and an optoelectronic or passive optical component that is to be stabilized in terms of temperature is provided.
  • In a preferred refinement, the arrangement is constructed in such a way that the optical axis of the optoelectronic transmitting and/or receiving element is perpendicular to the Peltier cooler. A particularly compact construction is provided as a result of this.
  • In an advantageous embodiment, the Peltier cooler is provided with solderable metalization that can be patterned highly precisely by means of photolithographic methods. Via the metalization, it is possible to make contact with optoelectronic components arranged on the Peltier cooler directly. In this case, one contact of the optoelectronic component is soldered for example to metalization on the Peltier cooler, while the other contact is contact-connected by means of a bonding wire.
  • The Peltier cooler furthermore preferably has micromechanical trenches, which serve in particular for receiving an optical fiber. The trenches are preferably V-grooves etched into silicon in the 110 plane. Further structures for instance for self-alignment processes may likewise be formed on the Peltier cooler.
  • Moreover, additional components may be arranged on the Peltier cooler, for instance an additional monitor diode for monitoring the laser light and/or a temperature diode for monitoring the temperature, and also glass prisms for beam deflection and lenses. In this case, the Peltier cooler provides for temperature stabilization of the entire arrangement.
  • It is further pointed out that constructions of one- or two-dimensional arrays of diodes, for instance VCSEL diodes, may also be arranged on the Peltier cooler directly or with interposition of a carrier substrate.
  • The optoelectronic component is preferably a transmitting and/or receiving unit for optical message transmission. An optical component arranged on the Peltier cooler is for example a WDM filter, a multiplexer/demultiplexer or a switch.
  • In a further embodiment variant, optical and/or electrical components, for example a diode or a thin-film resistor, are integrated directly into the Peltier cooler. The degree of integration of the assembly is increased further as a result of this.
  • In one refinement of the invention, a specific Peltier cooler that provides a specific temperature regulation is in each case provided for individual components or component arrangements of the assembly. The individual specific Peltier coolers may in turn be connected to a large, conventional Peltier cooler, the specific Peltier coolers then being responsible for fine regulation.
  • The invention is preferably used in conjunction with passive optical components which inherently have no evolution of heat. Instead of temperature stabilization, the Peltier coolers may in this case also serve for influencing optical signals in a defined manner. Thus, a local temperature change that leads to a phase change may be brought about by means of Peltier coolers in particular in the case of optical modulators such as, for example, Mach-Zehnder interferometers or directional couplers. In particular, micro-Peltier elements can replace strip heaters used in the prior art in passive optical components appertaining to optoelectronics. In this case, a micro-Peltier element is assigned for example to an optical waveguide or optical waveguide arm of an optical modulator, the phase of the light in the optical waveguide or optical waveguide arm being set in a defined manner by means of heating or cooling.
  • In an advantageous further refinement, a plurality of Peltier elements are arranged in a Peltier array. In this case, the Peltier array is assigned for example to an array of passive optical elements, for instance an array of Mach-Zehnder inteferometers, and in each case provides locally for a desired temperature change.
  • The invention is explained in more detail below using a plurality of exemplary embodiments with reference to the figures of the drawing, in which:
  • FIG. 1 shows a diagrammatic illustration of a TO housing with a silicon chip arranged on a micro-Peltier cooler;
  • FIG. 2 shows one beside the other, a transmitting and receiving element in each case arranged in a TO housing in an arrangement in accordance with FIG. 1;
  • FIG. 3 shows a plan view of an exemplary embodiment of a transmitting assembly mounted on a Peltier cooler;
  • FIG. 4 shows an exemplary embodiment of a VCSEL laser mounted on a micro-Peltier cooler;
  • FIG. 5 shows an exemplary embodiment of an edge emitting laser with integrated beam deflection mounted on a micro-Peltier element;
  • FIG. 6 shows a detail view of the beam deflection of the arrangement of FIG. 5;
  • FIG. 7 shows an arrangement in which an edge emitter laser, rotated through 90°, is coupled to a heat sink by means of a micro-Peltier element;
  • FIGS. 8 a-b diagrammatically show the construction of a temperature-stabilized transmitting assembly in accordance with the prior art in side and plan views;
  • FIGS. 9 a-b diagrammatically show the construction of a temperature-stabilized transmitting assembly according to the invention in side and plan views;
  • FIG. 10 shows a micromodule with double beam deflection arranged on a micro-Peltier element;
  • FIGS. 11 a-c show a temperature-stabilized transmitting assembly with an edge emitter in side and plan views and with a sectional view of an integrated v-groove formed in an SI chip;
  • FIGS. 12 a-b show an arrangement corresponding to FIGS. 11 a-c with a V-groove integrated into the Peltier element;
  • FIGS. 13 a-d show the arrangement of an edge emitter arranged on a Peltier element with two configurations of the edge emitter;
  • FIGS. 14 a-b show the arrangement of a VCSEL laser diode arranged on a Peltier element in side and plan views;
  • FIG. 15 shows a fiber Bragg filter arranged on a Peltier element;
  • FIG. 16 diagrammatically shows the arrangement of a passive optical component on a Peltier element; and
  • FIG. 17 shows the arrangement of a micro-Peltier cooler in a Mach-Zehnder interferometer.
  • FIG. 1 diagrammatically shows an exemplary embodiment of an optoelectronic transmitting and/or receiving element 1 arranged on a micro-Peltier cooler 2.
  • The transmitting and/or receiving element is formed as a chip 1 having for example a laser, in particular a VCSEL laser, a photodiode or a silicon micromodule with transmitting and monitor diode and optical deflection means. The chip 1 is arranged directly on the micro-Peltier cooler 2, which in this case simultaneously serves as a carrier substrate (submount). Both are situated in a TO housing 3, to be precise a TO housing of small design, which has a cap 31. In this case, the optical axis of the chip 1 runs perpendicular to the micro-Peltier cooler 2.
  • TO (Transistor Outline) housings are standard housings known in the prior art for optical transmitting or receiving modules, the form of which is similar to the housing of a (traditional) transistor but which have a glass window for entry and exit of light at the top side. There are standardized sizes for TO housings. Small TO housings of the TO46, TO35, TO37 and TO52 standard, for example, are used in the present case, the numerical indication specifying the external diameter.
  • The micro-Peltier element 2 is embodied in silicon and likewise has small dimensions. It has a thickness of less than 1 mm and an edge length of 1-2 mm, for example. As an alternative, the micro-Peltier element 2 may also comprise silicon carbide, diamond or other materials having high thermal conductivity.
  • At its top side, the cap 31 has a TO window and a fiber coupling 32 and/or a filter element. The micro-Peltier cooler 2 is mounted on a base plate 33 through which pass terminal pins 34 of the TO housing 3. The chip 1 is contact-connected by means of bonding wires 4, one bonding wire being led from one contact pin directly to a terminal pad on the top side of the chip 1, while the other bonding wire is connected to a terminal pad on the top side of the micro-Peltier cooler 2. In this case, the micro-Peltier cooler 2 has solderable metalization in particular gold metalization, which can be patterned highly accurately by means of photolithography. The underside of the chip 1 is contact-connected via the solderable metalization.
  • FIG. 2 shows an arrangement in which two TO assemblies 5, 6 in accordance with FIG. 1 are arranged one beside the other in a transceiver. In one TO assembly 5, a transmitting element 51 is arranged directly on a micro-Peltier cooler 52; in the other TO assembly 6, a receiving element 61 is arranged directly on a micro-Peltier cooler 52. The distance A is only approximately 5-10 mm on account of the small dimensions of the TO housings. The arrangement may thus be used as a subassembly in an optoelectronic transceiver of small design.
  • FIG. 3 shows an example of the concrete construction of the transmitting assembly of a TO housing in accordance with FIG. 1. Accordingly, a chip 1 is arranged directly on the micro-Peltier element 2, said chip having a micromodule with a laser diode, a monitor diode 11 and a temperature diode 12. The laser diode is concealed by a lens 7 in the plan view illustrated. The illustration likewise shows the respective bonding wires 81-86 for making contact with the individual components.
  • The monitor diode 11 serves in a customary manner for detecting and monitoring the power radiated by the laser diode. On account of its proximity to the transmitting diode, the temperature diode 12 specifies the temperature of the transmitting diode. In this case, the signal generated by the temperature diode 12 serves for regulating the Peltier element 2, i.e. this is cooled or heated depending on the temperature stabilization to be effected.
  • As an alternative, the use of a separate temperature diode may also be dispensed with and the monitor diode may be used for temperature measurement. It is also pointed out that the components illustrated do not have to be integrated into a micromodule 1 that is then arranged on the micro-Peltier element 2. Instead, laser diode, monitor diode and temperature diode may in each case also be arranged directly on the micro-Peltier element 2. In this case, the monitor diode 11 and the temperature diode 12 may be positioned discretely on the silicon Peltier cooler 2 or, in the event of being a silicon diode, may be integrated directly into the silicon Peltier cooler 2.
  • In particular, a diode and/or further components such as a thin film resistor may be integrated in the upper or lower cover of the silicon Peltier cooler 2.
  • FIG. 4 shows a coaxial construction of a transmitting assembly, a VCSEL laser chip 9 being arranged directly on a micro-Peltier cooler 2. In this case, the upper contact of the laser chip 9 is provided by a bonding wire 4 proceeding from the surface of the micro-Peltier cooler 2. Further bonding wires connect the contact pins 34 of the TO housing (illustrated incompletely) to contact pads or metalizations on the surface of the micro-Peltier cooler 2. The micro-Peltier element 2 in turn serves as a submount for the laser chip 9.
  • FIGS. 5 and 6 show an arrangement that is comparable to the arrangement of FIG. 4, an edge emitting laser being used instead of a VCSEL laser chip. In this case, a beam deflection is integrated in the laser chip 10, said beam deflection being provided by a crystallographically etched mirror area 11 and deflecting the laterally radiated laser beam perpendicularly upward.
  • The exemplary embodiment of FIG. 7 illustrates an edge emitting laser chip 13 arranged in a TO housing (again illustrated only partially) in an arrangement rotated through 90° relative to FIG. 5. In this case, the laser chip 13 is positioned directly on a micro-Peltier element 2, which is in turn mounted on a heat sink 12 integrated in the TO housing.
  • FIGS. 8 a and 8 b show the known construction of a construction—used for optical data transmission—with an edge emitting laser chip 14, a monitor diode 15, a temperature diode 16 (which is embodied for example as a thermistor), a carrier substrate 17, made in particular, of silicon, on which the above-mentioned elements 14, 15, 16 are arranged, a lens 18, a filter 19 or optical isolator and an optical waveguide 20, in which light from the laser 14 is coupled. The arrangement is arranged altogether on a common Peltier element 21, which is in turn coupled to a heat sink 22. It is disadvantageous that specific thermal regulation of the individual elements cannot be effected in this case.
  • FIGS. 9 a, 9 b show an arrangement in which the laser chip 14, the monitor diode 15, the temperature diode 16 and the corresponding carrier substrate 17 are arranged on a specific micro-Peltier cooler 23. Specific temperature regulation can now be effected. If appropriate, a conventional, large Peltier element may additionally be used for the entire arrangement, in which case the micro-Peltier cooler 23 would then be responsible for fine regulation.
  • As an alternative, the carrier substrate 17 may also be dispensed with and the elements 14, 15, 16 may be arranged directly on the micro-Peltier cooler 23.
  • FIG. 10 shows an exemplary embodiment of a micromodule 24, which is again arranged on a micro-Peltier cooler 23 formed in silicon. The micromodule has a laser 25, a monitor diode 26, a silicon lens 27 and two glass prisms 28, 29 for double beam deflection. For passive mounting of the components, alignment marks may be integrated into the micro-Peltier cooler. The micro-Peltier cooler may also have micromechanical cut-outs for forming receptacle structures for the components.
  • The exemplary embodiment of FIG. 10 represents an example of the arrangement of various optical and optoelectronic components on a micro-Peltier cooler. As an alternative, the arrangement is connected to the micro-Peltier cooler by means of an additional submount.
  • The exemplary embodiment of FIGS. 11 a-11 c is similar to the exemplary embodiment of FIGS. 9 a, 9 b, the optical fiber 20 being arranged in a V-groove 31 of silicon chip 30 adjoining the micro-Peltier cooler 23. In this case, the fiber 20 goes directly right into the laser 14 by means of a butt coupling. Instead of being arranged in an optical fiber 20, the light may also be arranged in an integrated waveguide embodied for example using glass on silicon technology. In this case, the integrated waveguide formed on the chip 30 is likewise brought directly right up to the laser 14.
  • The arrangement illustrated permits a specific cooling only of the component group 14, 15, 16. It is not necessary to arrange the entire assembly on a Peltier element as in the prior art (cf. FIG. 8). Since the micro-Peltier cooler 17 is preferably formed from silicon, it has similar thermal properties to the silicon chip 30. As a result, optical waveguide 20 and laser chip 14 can be aligned with respect to one another without the silicon chip 30 also being temperature-stabilized.
  • In FIGS. 12 a, 12 b, the submount 17 arranged on the micro-Peltier cooler 23 additionally performs the function of the silicon chip 30 of FIG. 11, a V-groove being micromechanically integrated into the submount. If no submount is provided, the V-groove is introduced directly into the micro-Peltier cooler.
  • FIGS. 14 a-14 d show a construction with an edge emitting laser 14, into which, in accordance with FIG. 13 c, an etching trench 31 with a mirror area 32 is integrated, through which the light is radiated upward. In the example of FIG. 13 d, this is achieved by means of a mirror area 33 given upside—down mounting of the laser diode 14.
  • Generally, provision may be made of external prisms/mirrors or integrated arrangements for beam deflection. The latter may, however, also be monolithically integrated into the micro-Peltier element.
  • In accordance with FIGS. 14 a, 14 b, a vertically emitting laser 14 with an active laser region 14 a is mounted on a micro-Peltier cooler 23 by means of a submount 17 or directly. A monitor diode 16 serves for temperature regulation. Such a construction is particularly compact.
  • In a manner analogous to that described with reference to the above figures, receiving elements may also be coupled to a micro-Peltier cooler. This may involve receiver diodes whose light-sensitive area is situated on the top side or alternatively on the underside, or else laterally illuminated receiver diodes, in particular those for high data rates above 10 Gbit/s.
  • By way of example, use with a silicon avalanche photo diode (APD) is advantageous. In the case of construction on a Peltier cooler, the signal-to-noise ratio can be improved by means of a temperature regulation. In the case of APD diodes, the avalanche factor is temperature-dependent. In the case of an APD array, the individual pixels could be regulated to different temperatures by means of a Peltier array in order thus to compensate for the fluctuations in the gain factor, or to set different gain factors in a specific manner.
  • The use of a micro-Peltier cooler 23 is also of interest in conjunction with passive optical components, in particular of a WDM (wavelength division multiplex) system, since they are considerably more compact than conventional arrangements and actually enable specific temperature regulation of individual components. Such components, for instance filters, multiplexers, must likewise be temperature-stabilized.
  • In accordance with FIG. 15, a Fabry-Perot filter 34 formed in a waveguide is coupled to a micro-Peltier cooler 23 by means of a submount 17. FIG. 16 generally shows a diagrammatically illustrated passive optical component 35 on a micro-Peltier cooler 23, it being possible for a submount 17 additionally to be provided. However, in this case, too, the micro-Peltier cooler may simultaneously serve as a submount.
  • FIG. 17 illustrates a Mach-Zehnder interferometer 36 such as is employed in WDM systems. The signals of a plurality of data channels which are transmitted in an optical waveguide 38 are present at the input 37 of the Mach-Zehnder interferometer 36. In this case, the individual data channels each have a different wavelength. By way of example, the wavelengths of the data channels lie in the range between 1530 nm and 1570 nm. In the frequency domain, the channel spacing is 100 GHz, for example.
  • The Mach-Zehnder interferometer 36 operates as a spectral filter. A coupler is present at its input 37 and divides the input signal between two arms 36 a, 36 b of the filter 36. In order to be able to precisely set the phase difference between the two arms 36 a, 36 b, a phase shifter 39 is connected to the lower arm 36 b. Instead of the heating electrodes or strip heaters known in the prior art, a micro-Peltier element 39 is used as the phase shifter. The waveguide 36 b can be locally cooled or heated by means of a cooling or heating. By means of the thermo-optical effect, this process of cooling or heating causes a change in refractive index, so that the optical path length can be set by means of the micro-Peltier element 39 and a phase shift can thus be generated between the signals of the two arms 36 a, 36 b. As a result, the filter properties of the filter 36 can be configured as desired within a wide range and be designed for a wide variety of applications. In particular, the filter is designed in such a way that, at the output 40 of the Mach-Zehnder interferometer 36, the signals are distributed between two output arms in a wavelength-dependent manner.
  • It is equally conceivable for the Mach-Zehnder interferometer 36 to represent part of an attenuator unit. The incoming signals are divided between the two arms 36 a, 36 b and combined again after a phase shift in one arm, as a result of which a defined signal attenuation can be set.
  • The exemplary embodiment of FIG. 17 is only a representative example of configurations in which a phase change in a signal is brought about by means of a micro-Peltier cooler. Other examples are directional couplers, optical switches and optical multiplexers/demultiplexers. In most cases, conventionally used heating electrodes may likewise be replaced by a micro-Peltier element in each case. On account of its small size, a micro-Peltier element ensures in this case that a temperature change occurs only in a locally delimited region.

Claims (18)

1-18. (canceled)
19. An optoelectronic assembly comprising an optoelectronic or passive optical component, and a cooling element for cooling the optoelectronic or passive optical component, wherein the cooling element comprises a Peltier cooler having a thickness of less than about 1 mm, on which the component is arranged either directly or with interposition of a carrier substrate therebetween, wherein the Peltier cooler is embodied in silicon.
20. The optoelectronic assembly as claimed in claim 19, wherein the Peltier cooler has an edge length of less than about 5 mm.
21. The optoelectronic assembly as claimed in claim 19, wherein the optoelectronic or passive optical component and the Peltier cooler are arranged in a housing.
22. The optoelectronic assembly as claimed in claim 21, wherein the housing comprises a TO housing.
23. The optoelectronic assembly as claimed in claim 19, wherein the Peltier cooler comprises solderable metallizations for electrical connection thereto.
24. The optoelectronic assembly as claimed in claim 19, further comprising micromechanical trenches formed in the Peltier cooler, wherein the trenches are configured to receive an optical fiber therein.
25. The optoelectronic assembly as claimed in claim 19, further comprising an additional monitor diode or a temperature diode, or both, arranged on the Peltier cooler or integrated therein.
26. The optoelectronic assembly as claimed in claim 19, wherein an optical axis of the optoelectronic component is arranged perpendicular to a surface of the Peltier cooler.
27. The optoelectronic assembly as claimed in claim 19, wherein the optoelectronic or passive optical component comprises an edge emitting laser having an integrated beam deflection component associated therewith.
28. The optoelectronic assembly as claimed in claim 19, wherein the optoelectronic or passive optical component comprises an edge emitting laser mounted on the Peltier cooler that is arranged on a heat sink.
29. The optoelectronic assembly as claimed in claim 19, further comprising one or more glass prisms for beam deflection and one or more lenses, wherein the prisms and lenses are arranged on the Peltier cooler.
30. The optoelectronic assembly as claimed in claim 19, wherein the optoelectronic component is integrated directly into the Peltier cooler.
31. The optoelectronic assembly as claimed in claim 19, further comprising a plurality of optoelectronic or passive components, and comprising a plurality of Peltier coolers each individually associated with the plurality of components of the assembly.
32. The optoelectronic assembly as claimed in claim 31, wherein each of the plurality of Peltier coolers are in turn connected to a large Peltier cooler.
33. The optoelectronic assembly as claimed in claim 19, further comprising a plurality of Peltier cooler elements arranged in a Peltier array.
34. The optoelectronic assembly as claimed in claim 19, wherein the Peltier cooler is configured as a heating element operable to influence a phase of an optical signal associated with the optoelectronic or passive optical component.
35. The optoelectronic assembly as claimed in claim 34, wherein the passive optical component comprises an optical modulator or a directional coupler, and further comprising an optical waveguide associated with the optical modulator, wherein a phase of light in the optical waveguide is influenced by the Peltier cooler.
US10/504,649 2002-02-14 2002-02-14 Optoelectronic component with a peltier cooler Abandoned US20050138934A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/DE2002/000543 WO2003069744A1 (en) 2002-02-14 2002-02-14 Optoelectronic component with a peltier cooler

Publications (1)

Publication Number Publication Date
US20050138934A1 true US20050138934A1 (en) 2005-06-30

Family

ID=27674407

Family Applications (1)

Application Number Title Priority Date Filing Date
US10/504,649 Abandoned US20050138934A1 (en) 2002-02-14 2002-02-14 Optoelectronic component with a peltier cooler

Country Status (4)

Country Link
US (1) US20050138934A1 (en)
AU (1) AU2002244626A1 (en)
DE (1) DE10296494D2 (en)
WO (1) WO2003069744A1 (en)

Cited By (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030194353A1 (en) * 2001-12-21 2003-10-16 Teragenics, Inc. Temperature controlled microfabricated two-pin liquid sample dispensing system
US20080303524A1 (en) * 2007-04-24 2008-12-11 Lothar Schon Device consisting of a combination of a magnetic resonance tomograph and a positron emission tomograph
US20090114827A1 (en) * 2007-09-20 2009-05-07 Ziad Burbar Method for stabilizing the gain of a pet detection system
US20090149895A1 (en) * 2007-12-05 2009-06-11 Searete Llc, A Limited Liability Corporation Of The State Of Delaware Method and system for cyclical neural modulation based on activity state
US20090149919A1 (en) * 2007-12-05 2009-06-11 Searete Llc, A Limited Liability Corporation Of The State Of Delaware Method for thermal modulation of neural activity
US20090149693A1 (en) * 2007-12-05 2009-06-11 Searete Llc, A Limited Liability Corporation Of The State Of Delaware Method for magnetic modulation of neural conduction
US20090149896A1 (en) * 2007-12-05 2009-06-11 Searete Llc, A Limited Liability Corporation Of The State Of Delaware System for chemical modulation of neural activity
US20090149911A1 (en) * 2007-12-05 2009-06-11 Searete Llc, A Limited Liability Corporation Of The State Of Delaware System for electrical modulation of neural conduction
US20090149797A1 (en) * 2007-12-05 2009-06-11 Searete Llc, A Limited Liability Corporation Of The State Of Delaware System for reversible chemical modulation of neural activity
US20090149694A1 (en) * 2007-12-05 2009-06-11 Searete Llc, A Limited Liability Corporation Of The State Of Delaware System for magnetic modulation of neural conduction
US20090149897A1 (en) * 2007-12-05 2009-06-11 Searete Llc, A Limited Liability Corporation Of The State Of Delaware System for transdermal chemical modulation of neural activity
US20090149912A1 (en) * 2007-12-05 2009-06-11 Searete Llc, A Limited Liability Corporation Of The State Of Delaware Method for electrical modulation of neural conduction
WO2009105923A1 (en) * 2008-02-25 2009-09-03 鹤山丽得电子实业有限公司 A manufacturing method of led apparatus
US20100124058A1 (en) * 2008-11-18 2010-05-20 Miller Michael R Thermal Management of LED Lighting Systems
US20130136403A1 (en) * 2011-11-29 2013-05-30 Mitsubishi Electric Corporation Optical module
US20140239315A1 (en) * 2013-02-23 2014-08-28 Luxnet Corporation Package structure of optical transceiver component
US20180101032A1 (en) * 2016-10-07 2018-04-12 California Institute Of Technology Thermally Enhanced Fast Optical Phase Shifter
US9995696B2 (en) 2016-02-02 2018-06-12 Daniel Marc Himmel Open-air crystallization plate cooler
US10260863B2 (en) 2014-04-30 2019-04-16 Attocube Systems Ag Interferometric displacement sensor for integration into machine tools and semiconductor lithography systems
US10382140B2 (en) 2016-06-07 2019-08-13 California Institute Of Technology Optical sparse phased array receiver
US10942273B2 (en) 2017-02-13 2021-03-09 California Institute Of Technology Passive matrix addressing of optical phased arrays
US11237095B2 (en) 2019-04-25 2022-02-01 Particle Measuring Systems, Inc. Particle detection systems and methods for on-axis particle detection and/or differential detection
US11249369B2 (en) 2016-10-07 2022-02-15 California Institute Of Technology Integrated optical phased arrays with optically enhanced elements
US11336373B2 (en) 2017-03-09 2022-05-17 California Institute Of Technology Co-prime optical transceiver array
US11456532B2 (en) 2016-05-04 2022-09-27 California Institute Of Technology Modular optical phased array
US11781965B2 (en) 2017-10-26 2023-10-10 Particle Measuring Systems, Inc. System and method for particles measurement

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3977315B2 (en) 2003-10-31 2007-09-19 ファイベスト株式会社 Optical communication device, optical communication system, and optical transceiver
US7232264B2 (en) 2003-12-19 2007-06-19 Infineon Technologies Ag Optoelectronic arrangement having a laser component, and a method for controlling the emitted wavelength of a laser component
US7167492B2 (en) 2003-12-19 2007-01-23 Infineon Technologies Ag Optoelectronic arrangement having at least one laser component, and a method for operating a laser component
US7118292B2 (en) * 2005-01-24 2006-10-10 Emcore Corporation Coaxial cooled laser modules with integrated thermal electric cooler and optical components

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3941927A (en) * 1974-11-11 1976-03-02 Battelle Development Corporation Optical fiber deflection device
US5075555A (en) * 1990-08-10 1991-12-24 Kevex Instruments Peltier cooled lithium-drifted silicon x-ray spectrometer
US5127731A (en) * 1991-02-08 1992-07-07 Hughes Aircraft Company Stabilized two-color laser diode interferometer
US5867303A (en) * 1997-05-19 1999-02-02 Altos Inc. Method and apparatus for optimizing the output of a harmonic generator
US5898718A (en) * 1997-05-19 1999-04-27 Altos Inc. Method and apparatus for optimizing the output of a multi-peaked frequency harmonic generator
US6009712A (en) * 1997-07-29 2000-01-04 Ando Electric Co., Ltd. Temperature controller of optical module package
US6219364B1 (en) * 1997-01-09 2001-04-17 Nec Corporation Semiconductor laser module having improved metal substrate on peltier element
US6382762B1 (en) * 2001-04-30 2002-05-07 Hewlett-Packard Company Peltier humidity determination system for inkjet printing
US20020164475A1 (en) * 2000-09-20 2002-11-07 Hitachi Metals, Ltd. Silicon nitride powder, silicon nitride sintered body, sintered silicon nitride substrate, and circuit board and thermoelectric module comprising such sintered silicon nitride substrate
US6611546B1 (en) * 2001-08-15 2003-08-26 Blueleaf, Inc. Optical transmitter comprising a stepwise tunable laser
US6711203B1 (en) * 2000-09-22 2004-03-23 Blueleaf, Inc. Optical transmitter comprising a stepwise tunable laser
US6741629B1 (en) * 2000-09-22 2004-05-25 Blueleaf, Inc. Optical transmitter having optically pumped vertical external cavity surface emitting laser

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2333119A1 (en) * 1973-06-29 1975-01-23 Licentia Gmbh Semiconductor laser with Peltier element heat sink - has Peltier elements between semiconductor body and heat sink block
DE3048535A1 (en) * 1980-12-22 1982-07-08 Messerschmitt-Bölkow-Blohm GmbH, 8000 München Miniature semiconductor laser diode - has diode chip on small thermo-electric cooler and laser beam focussing gradient index fibres
JP2549307B2 (en) * 1989-02-20 1996-10-30 敏雄 平井 Thermoelectric material
DE8915890U1 (en) * 1989-10-26 1992-01-16 Messerschmitt-Boelkow-Blohm Gmbh, 8012 Ottobrunn, De
AU6317000A (en) * 1999-08-03 2001-03-05 Toyo Kohan Co. Ltd. Thermoelectric device and manufacture thereof

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3941927A (en) * 1974-11-11 1976-03-02 Battelle Development Corporation Optical fiber deflection device
US5075555A (en) * 1990-08-10 1991-12-24 Kevex Instruments Peltier cooled lithium-drifted silicon x-ray spectrometer
US5127731A (en) * 1991-02-08 1992-07-07 Hughes Aircraft Company Stabilized two-color laser diode interferometer
US6219364B1 (en) * 1997-01-09 2001-04-17 Nec Corporation Semiconductor laser module having improved metal substrate on peltier element
US5867303A (en) * 1997-05-19 1999-02-02 Altos Inc. Method and apparatus for optimizing the output of a harmonic generator
US5898718A (en) * 1997-05-19 1999-04-27 Altos Inc. Method and apparatus for optimizing the output of a multi-peaked frequency harmonic generator
US6009712A (en) * 1997-07-29 2000-01-04 Ando Electric Co., Ltd. Temperature controller of optical module package
US20020164475A1 (en) * 2000-09-20 2002-11-07 Hitachi Metals, Ltd. Silicon nitride powder, silicon nitride sintered body, sintered silicon nitride substrate, and circuit board and thermoelectric module comprising such sintered silicon nitride substrate
US6711203B1 (en) * 2000-09-22 2004-03-23 Blueleaf, Inc. Optical transmitter comprising a stepwise tunable laser
US6741629B1 (en) * 2000-09-22 2004-05-25 Blueleaf, Inc. Optical transmitter having optically pumped vertical external cavity surface emitting laser
US6382762B1 (en) * 2001-04-30 2002-05-07 Hewlett-Packard Company Peltier humidity determination system for inkjet printing
US6611546B1 (en) * 2001-08-15 2003-08-26 Blueleaf, Inc. Optical transmitter comprising a stepwise tunable laser

Cited By (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7258839B2 (en) * 2001-12-21 2007-08-21 Cytonome, Inc. Temperature controlled microfabricated two-pin liquid sample dispensing system
US20030194353A1 (en) * 2001-12-21 2003-10-16 Teragenics, Inc. Temperature controlled microfabricated two-pin liquid sample dispensing system
US20080303524A1 (en) * 2007-04-24 2008-12-11 Lothar Schon Device consisting of a combination of a magnetic resonance tomograph and a positron emission tomograph
US7847553B2 (en) * 2007-04-24 2010-12-07 Siemens Aktiengesellschaft Device consisting of a combination of a magnetic resonance tomograph and a positron emission tomograph
US7772559B2 (en) * 2007-09-20 2010-08-10 Siemens Aktiengesellschaft Method for stabilizing the gain of a pet detection system
US20090114827A1 (en) * 2007-09-20 2009-05-07 Ziad Burbar Method for stabilizing the gain of a pet detection system
US8180446B2 (en) 2007-12-05 2012-05-15 The Invention Science Fund I, Llc Method and system for cyclical neural modulation based on activity state
US9789315B2 (en) 2007-12-05 2017-10-17 Gearbox, Llc Method and system for modulating neural activity
US20090149911A1 (en) * 2007-12-05 2009-06-11 Searete Llc, A Limited Liability Corporation Of The State Of Delaware System for electrical modulation of neural conduction
US20090149797A1 (en) * 2007-12-05 2009-06-11 Searete Llc, A Limited Liability Corporation Of The State Of Delaware System for reversible chemical modulation of neural activity
US20090149694A1 (en) * 2007-12-05 2009-06-11 Searete Llc, A Limited Liability Corporation Of The State Of Delaware System for magnetic modulation of neural conduction
US20090149897A1 (en) * 2007-12-05 2009-06-11 Searete Llc, A Limited Liability Corporation Of The State Of Delaware System for transdermal chemical modulation of neural activity
US20090149912A1 (en) * 2007-12-05 2009-06-11 Searete Llc, A Limited Liability Corporation Of The State Of Delaware Method for electrical modulation of neural conduction
US10092692B2 (en) 2007-12-05 2018-10-09 Gearbox, Llc Method and system for modulating neural activity
US20090149896A1 (en) * 2007-12-05 2009-06-11 Searete Llc, A Limited Liability Corporation Of The State Of Delaware System for chemical modulation of neural activity
US20090149693A1 (en) * 2007-12-05 2009-06-11 Searete Llc, A Limited Liability Corporation Of The State Of Delaware Method for magnetic modulation of neural conduction
US20090149919A1 (en) * 2007-12-05 2009-06-11 Searete Llc, A Limited Liability Corporation Of The State Of Delaware Method for thermal modulation of neural activity
US8160695B2 (en) 2007-12-05 2012-04-17 The Invention Science Fund I, Llc System for chemical modulation of neural activity
US8165668B2 (en) 2007-12-05 2012-04-24 The Invention Science Fund I, Llc Method for magnetic modulation of neural conduction
US8165669B2 (en) 2007-12-05 2012-04-24 The Invention Science Fund I, Llc System for magnetic modulation of neural conduction
US8170659B2 (en) 2007-12-05 2012-05-01 The Invention Science Fund I, Llc Method for thermal modulation of neural activity
US8170660B2 (en) 2007-12-05 2012-05-01 The Invention Science Fund I, Llc System for thermal modulation of neural activity
US8170658B2 (en) 2007-12-05 2012-05-01 The Invention Science Fund I, Llc System for electrical modulation of neural conduction
US8180447B2 (en) 2007-12-05 2012-05-15 The Invention Science Fund I, Llc Method for reversible chemical modulation of neural activity
US20090149895A1 (en) * 2007-12-05 2009-06-11 Searete Llc, A Limited Liability Corporation Of The State Of Delaware Method and system for cyclical neural modulation based on activity state
US8195287B2 (en) 2007-12-05 2012-06-05 The Invention Science Fund I, Llc Method for electrical modulation of neural conduction
US8233976B2 (en) 2007-12-05 2012-07-31 The Invention Science Fund I, Llc System for transdermal chemical modulation of neural activity
US9358374B2 (en) 2007-12-05 2016-06-07 Gearbox, Llc Method and system for blocking nerve conduction
US9020592B2 (en) 2007-12-05 2015-04-28 The Invention Science Fund I, Llc Method and system for blocking nerve conduction
US8630706B2 (en) 2007-12-05 2014-01-14 The Invention Science Fund I, Llc Method and system for reversible chemical modulation of neural activity
US9020591B2 (en) 2007-12-05 2015-04-28 The Invention Science Fund I, Llc Method and system for ultrasonic neural modulation in a limb
US8989858B2 (en) 2007-12-05 2015-03-24 The Invention Science Fund I, Llc Implant system for chemical modulation of neural activity
US9014802B2 (en) 2007-12-05 2015-04-21 The Invention Science Fund I, Llc Method and system for modulating neural activity in a limb
WO2009105923A1 (en) * 2008-02-25 2009-09-03 鹤山丽得电子实业有限公司 A manufacturing method of led apparatus
US8240885B2 (en) 2008-11-18 2012-08-14 Abl Ip Holding Llc Thermal management of LED lighting systems
US20100124058A1 (en) * 2008-11-18 2010-05-20 Miller Michael R Thermal Management of LED Lighting Systems
US20130136403A1 (en) * 2011-11-29 2013-05-30 Mitsubishi Electric Corporation Optical module
US9129883B2 (en) * 2013-02-23 2015-09-08 Luxnet Corporation Package structure of optical transceiver component
US20140239315A1 (en) * 2013-02-23 2014-08-28 Luxnet Corporation Package structure of optical transceiver component
US10260863B2 (en) 2014-04-30 2019-04-16 Attocube Systems Ag Interferometric displacement sensor for integration into machine tools and semiconductor lithography systems
US9995696B2 (en) 2016-02-02 2018-06-12 Daniel Marc Himmel Open-air crystallization plate cooler
US11456532B2 (en) 2016-05-04 2022-09-27 California Institute Of Technology Modular optical phased array
US10382140B2 (en) 2016-06-07 2019-08-13 California Institute Of Technology Optical sparse phased array receiver
US20180101032A1 (en) * 2016-10-07 2018-04-12 California Institute Of Technology Thermally Enhanced Fast Optical Phase Shifter
US10795188B2 (en) * 2016-10-07 2020-10-06 California Institute Of Technology Thermally enhanced fast optical phase shifter
US11249369B2 (en) 2016-10-07 2022-02-15 California Institute Of Technology Integrated optical phased arrays with optically enhanced elements
US10942273B2 (en) 2017-02-13 2021-03-09 California Institute Of Technology Passive matrix addressing of optical phased arrays
US11336373B2 (en) 2017-03-09 2022-05-17 California Institute Of Technology Co-prime optical transceiver array
US11781965B2 (en) 2017-10-26 2023-10-10 Particle Measuring Systems, Inc. System and method for particles measurement
US11237095B2 (en) 2019-04-25 2022-02-01 Particle Measuring Systems, Inc. Particle detection systems and methods for on-axis particle detection and/or differential detection

Also Published As

Publication number Publication date
DE10296494D2 (en) 2005-07-07
WO2003069744A1 (en) 2003-08-21
AU2002244626A1 (en) 2003-09-04

Similar Documents

Publication Publication Date Title
US20050138934A1 (en) Optoelectronic component with a peltier cooler
US6101210A (en) External cavity laser
US8089995B2 (en) Structures and methods for adjusting the wavelengths of lasers via temperature control
KR101024820B1 (en) Thermally tunable optical dispersion compensation devices
US7298941B2 (en) Optical coupling to IC chip
US6856475B2 (en) Optical module having temperature adjustment features
US8259765B2 (en) Passive phase control in an external cavity laser
US7295582B2 (en) Thermo-optic tunable laser apparatus
JP2001339118A (en) Light emitting module
KR101004175B1 (en) Retro-reflecting lens for external cavity optics
KR101788540B1 (en) Optical transmitter module with temperature device and method of manufacturing the same
US20150117491A1 (en) Tunable wavelength filter with embedded metal temperature sensor and its application to external-cavity type tunable wavelength laser
JP2003124566A (en) Semiconductor laser control module and optical system
KR101024719B1 (en) Thermally tunable optical dispersion compensation devices
WO2014200189A1 (en) Laser device having wavelength stabilizer
US20210367399A1 (en) Optical module and thermoelectric module
US6724784B2 (en) Optical wavelength locker module having a high thermal conductive material
JP7224555B1 (en) Optical module and optical module control method
EP1958302B1 (en) Passive phase control in an external cavity laser
KR20190058442A (en) Laser with optical filter and operating method thereof
KR20190000078A (en) Laser with optical filter and operating method thereof
KR100341388B1 (en) Intergrated optic wavelength monitoring device
Schumacher et al. Monolithically integrated 20-channel optical add/drop multiplexer subsystem with hybrid-integrated 40-channel photo detector array
JP2000277845A (en) Light-emitting module
WO2009054808A1 (en) Packaged tunable semiconductor laser structure and its fabrication

Legal Events

Date Code Title Description
AS Assignment

Owner name: INFINEON TECHNOLOGIES AG, GERMANY

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:WEIGERT, MARTIN;SCHUBERT, AXEL;AURACHER, FRANZ;AND OTHERS;REEL/FRAME:016367/0026;SIGNING DATES FROM 20040914 TO 20041007

AS Assignment

Owner name: MICROPELT GMBH, GERMANY

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:INFINEON TECHNOLOGIES AG;REEL/FRAME:020085/0438

Effective date: 20070920

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION