CN103631723A - Adjusting circuit and circuit adjusting method - Google Patents
Adjusting circuit and circuit adjusting method Download PDFInfo
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- CN103631723A CN103631723A CN201310635378.4A CN201310635378A CN103631723A CN 103631723 A CN103631723 A CN 103631723A CN 201310635378 A CN201310635378 A CN 201310635378A CN 103631723 A CN103631723 A CN 103631723A
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Abstract
The invention discloses an adjusting circuit and a circuit adjusting method. The circuit comprises an EEPROM (electrically erasable programmable read-only memory) and a state machine; an additional storage unit is arranged in the EEPROM, adjusting parameters corresponding to different state values of a to-be-adjusted circuit and the state machine are preliminarily stored in a storage address of the storage unit, the state machine is connected with a reading-writing port of the EEPROM, the corresponding storage address is read according to the current state value of the to-be-adjusted circuit and the state machine, and the adjusting parameter is read from the storage address; and the to-be-adjusted circuit and the state machine are adjusted according to the adjusting parameter. By adopting the adjusting circuit and the circuit adjusting method, the problem that the existing circuit parameter is complicated to adjust can be solved. The circuit unit is adjusted, the flexibility for adjusting the circuit can be improved, the universality of the circuit is improved, and the maintenance and application cost of the circuit can be reduced.
Description
Technical field
The present invention relates to automatically control and electronic application field, relate in particular to circuit conditioning method and regulating circuit.
Background technology
Along with the raising of modern integrated circuits production technology, the production cycle shortened of integrated circuit, circuit scale increases day by day.In actual application process, the integrated circuit of driving or control class need regulate according to practical situations, but generally, integrated circuit is after flow, inner parameter has arranged, if adjust or revise, needs special-purpose equipment operating cycle that need to be longer.For the problems referred to above, in prior art, many employings are carried out default mode to the vacant or existing adjusting pin of integrated circuit and are realized the adjusting to circuit.But said method is when implementing, due to vacant and regulate the parameter of pin that single normally or limited number of time are set, can not carry out read-write operation repeatedly to integrated circuit, and its parameter to be regulated, normally just obtainable after integrated circuit has been welded on wiring board, therefore, integrated circuit is repeatedly taken off also and can circuit be damaged from wiring board.Hence one can see that, in prior art, the parameter of integrated circuit regulated, and due to the peculiar property that its information reads, operation is difficulty comparatively, regulates number of times limited.The use cost of integrated circuit is improved, and reduced the global reliability of circuit.
Summary of the invention
In view of situation about existing in prior art, according to an aspect of the present invention, provide a kind of regulating circuit, comprise EEPROM and state machine; In described EEPROM, additional memory units is set, circuit to be regulated or the state machine corresponding adjusting parameter when various states value that prestores in the memory address of this storage unit, makes memory address corresponding one by one with described state value; Described state machine is connected with the reading-writing port of EEPROM, according to the current state value of circuit to be regulated or state machine, choose corresponding memory address, from this memory address, read and regulate parameter to treat regulating circuit according to described adjusting parameter or state machine setting regulates.
Preferably, described state machine comprises: state machine reading unit, state machine inner parameter setting unit and sensitivity amplifier, described state machine reading unit reads adjusting parameter from described EEPROM, and described state machine inner parameter setting unit regulates described sensitivity amplifier according to described adjusting parameter.
Preferably, described outside circuit to be regulated comprises: the driving circuit of multichannel charge pump drive circuit, positive high voltage or negative high voltage charge pump.
Preferably, described additional memory units comprises: the first additional memory units and the second additional memory units.
Preferably, when described outside circuit to be regulated is the driving circuit of positive high voltage or negative high voltage charge pump, the adjustment end Regulator of the charge pump that drives is connected with state machine, state machine is according to the first current state value of circuit to be regulated, from described the first additional memory units, choose institute's corresponding stored address, from this memory address, read the first adjusting parameter, according to described first, regulate parameter to regulate the driving circuit of positive high voltage or negative high voltage charge pump; If receive Regulator feedback signal, according to the second current state value of circuit to be regulated, from described the second additional memory units, choose institute's corresponding stored address, from this memory address, read the second adjusting parameter, according to described second, regulate parameter to regulate the driving circuit of positive high voltage or negative high voltage charge pump.
The present invention simultaneously also provides a kind of circuit conditioning method, comprises the following steps:
By circuit to be regulated corresponding adjusting parameter when the various states value, be stored in separate, stored address, make memory address corresponding one by one with described state value; According to the state value to be regulated of circuit to be regulated, choose corresponding memory address, from this memory address, read adjusting parameter; According to described adjusting parameter, described circuit to be regulated is regulated.
Preferably, described by circuit to be regulated corresponding adjusting parameter when the various states value, the step being stored in separate, stored address comprises: corresponding first regulate parameter and second to regulate parameter when the first state value and the second state value respectively driving circuit to be regulated, be stored in respectively in the first memory address and the second memory address.
Preferably, according to the state value to be regulated of circuit to be regulated, choose corresponding memory address, from this memory address, read and regulate the step of parameter to comprise: according to the first state value of circuit to be regulated, from the first memory address, choose the first adjusting parameter; If receive the feedback signal of adjusting end Regulator, circuit to be regulated, according to the second state value, is chosen the second adjusting parameter from the second memory address.
Preferably, described reading from memory address regulates the step of parameter to comprise: when circuit to be regulated is the driving circuit of low-voltage electrical apparatus or high temperature electrical equipment, from memory address, read and regulate after parameter, the adjusting parameter that this is read is carried out special string pattern verification or CRC check; If this verification is not passed through, again from this memory address, read adjusting parameter, until verification is passed through.
Pass through technique scheme, the present invention compared with prior art has the following advantages: the present invention is by EEPROM(EEPROM (Electrically Erasable Programmable Read Only Memo)) in the parameter to be regulated that prestores, therefore, when circuit need to regulate, by reading of the parameter to be regulated that prestores in the respective stored address to EEPROM, realized the enforcement of functional circuit has been regulated.Thereby the dirigibility that has improved circuit conditioning, improves the universality of circuit, reduces maintenance and the use cost of circuit.
Accompanying drawing explanation
Fig. 1 is regulating circuit of the present invention composition schematic diagram in one embodiment;
Fig. 2 be regulating circuit of the present invention in one embodiment, the composition schematic diagram that outside circuit to be regulated is multichannel charge pump drive circuit;
Fig. 3 be regulating circuit of the present invention in one embodiment, the composition schematic diagram that outside circuit to be regulated is state machine;
Fig. 4 be regulating circuit of the present invention in one embodiment, outside circuit to be regulated is that charge pump forms schematic diagram;
Fig. 5 be regulating circuit of the present invention in one embodiment, outside circuit to be regulated forms schematic diagram for band feedback charge pump;
Fig. 6 is the schematic flow sheet of circuit conditioning method in one embodiment of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the present invention is further detailed explanation.
If Fig. 1 is that the regulating system that realizes this method in one embodiment of the present invention forms as shown in schematic diagram.This system comprises: state machine 1, EEPROM2 and outside circuit to be regulated 3, wherein, state machine 1 and EEPROM2 form regulating circuit of the present invention, state machine reading unit 11 and state machine external parameter setting unit 12 are set in state machine 1, additional memory units 21 is set in EEPROM2.The end that reads of state machine reading unit 11 is connected with the read-write interface end of additional memory units 21, reads storage data from additional memory units 21.The output terminal of state machine reading unit 11 is connected with the input end of state machine external parameter setting unit 12, and the data that read from additional memory units 21 are sent in state machine external parameter setting unit 12.The output terminal of state machine external parameter setting unit 12 arranges end with the parameter of outside circuit 3 to be regulated and is connected, the circuit 3 output parameters to be regulated to outside.The implementation procedure of above-mentioned regulating system is: first, corresponding " parameter " when outside circuit 3 to be regulated is in running order 1, duty 2 and 3 three kinds of duties of duty, one by one corresponding being prestored in the continuous or discontinuous address of three of additional memory units 21.Afterwards, from three kinds of duties, select required duty, this duty corresponding " memory address " is prestored in the reading address of state machine reading unit 11.Follow-up, after starting state machine 1, state machine reading unit 11 is according to reading address, from additional memory units 21, read " parameter " of setting duty, and this " parameter " is sent in " state machine external parameter setting unit 12 ", state machine external parameter setting unit 12 is set outside circuit 3 to be regulated according to " parameter " that receive.Thereby realized the dynamic parameter setting of circuit to be regulated, efficiently solved after EEPROM2 flow, its problem that circuit parameter cannot change, cannot reappear setting to circuit that prestores, has improved dirigibility and the reliability of circuit.
By regulating circuit of the present invention, can realize the control to multichannel charge pump access quantity, as shown in Figure 2, as a kind of embodiment of regulating circuit of the present invention, outside circuit 3 to be regulated is multichannel charge pump 31-1, 31-2, 31-3 and 31-4 place in circuit, the access state of its multichannel charge pump comprises: access charge pump 31-1 work (set condition value is 1), access charge pump 31-1, 31-2 work (set condition value is 2), access charge pump 31-1, 31-2 and 31-3 work (set condition value is 3), access charge pump 31-1, 31-2, 31-3 and 31-4 work (set condition value is 4) four kinds of duties, wherein, during access charge pump 31-1 work, the motivation value of multichannel charge pump drive circuit 31 is 0001, access charge pump 31-1, during 31-2 work, the motivation value of multichannel charge pump drive circuit 31 is 0011, access charge pump 31-1, 31-2 and 31-3, the motivation value of multichannel charge pump drive circuit 31 is 0111, access charge pump 31-1, 31-2, 31-3 and 31-4, the motivation value of multichannel charge pump drive circuit 31 is 1111.Respectively above-mentioned charge pump state value is deposited in independent memory address, make state value corresponding with motivation value, specifically as shown in table 1:
| State value | Memory address | Motivation value |
| State value 1 | 0000 | 0001 |
| |
0001 | 0011 |
| |
0010 | 0111 |
| State value 4 | 0011 | 1111 |
Table 1
As: when needs carry out " routing unlatching " to multichannel charge pump 31-1,31-2 and 31-3, first, by the corresponding memory address 0010 of state value 3, be programmed into reading in statement of state machine reading unit 11.After state machine 1 electrifying startup, state machine reading unit 11 reads motivation value 0111 from memory address 0010, and this motivation value 0111 is passed through to state machine external parameter setting unit 12, multichannel charge pump drive circuit 31 is arranged, thereby realized the unlatching of charge pump 31-1,31-2 and 31-3, thereby completed the selection access of multichannel charge pump.Efficiently solve access charge pump quantity is carried out to real-time control problem, thereby reduced vacant power consumption, improved the whole service efficiency of multichannel charge pump.
For guaranteeing that regulating circuit of the present invention is in different application environment, all can the data in additional memory units 21 accurately be read, as shown in Figure 3, in a kind of embodiment of regulating circuit of the present invention, state machine 1 is as circuit to be regulated, state machine inner parameter setting unit 13 and sensitivity amplifier 14 are also set in state machine 1, this unit is for regulating state machine 1 parameters own, and be connected with the setting parameter end of sensitivity amplifier 14, sensitivity amplifier 14, the memory cell current of reading from EEPROM2 for comparison and the size of reference current, thereby the numerical value of judgement storage unit, by differential comparator circuit, the analogue value that compares electric current is converted to numeral (1 or 0), and output to data bus.When current regulating circuit is operated in high temperature, high pressure conditions, set condition value is 1, and the adjustment of sensitivity parameter of sensitivity amplifier 14 is 1; When current regulating circuit is operated in ecotopia (non-high pressure, high temperature and psychro-environment), set condition value is 2, and the adjustment of sensitivity parameter of sensitivity amplifier 14 is 0.8; Specifically as shown in table 2:
| State value | Memory address | Adjustment of sensitivity parameter |
| State value 1 | 0000 | 1 |
| |
0001 | 0.8 |
Table 2
When current regulating circuit is operated in ecotopia, state machine 1 is according to set condition value 2, the instruction of reading memory address 0001 is put in state machine reading unit 11, after state machine 1 powers on, from corresponding memory address 0001, read adjustment of sensitivity parameter 0.8.State machine 1, according to adjustment of sensitivity parameter 0.8, arranges the sensitivity amplifier 14 of state machine 1, thereby makes the current sensitivity of reading be more suitable for current working environment.Therefore make the data of storer read more reliable, thereby guaranteed the accurate control of subsequent conditioning circuit.
For passing through regulating circuit of the present invention, the dynamic adjustments of realization to charge pump, as shown in Figure 4, a kind of embodiment as regulating circuit of the present invention, when outside circuit 3 to be regulated is the driving circuit 32 of positive high voltage or negative high voltage charge pump, the driving parameter of this driving circuit 32 comprises: drive the driving parameter A of positive high voltage charge pump (state value 1) and the driving B parameter of driving negative high voltage charge pump (state value 2).And above-mentioned A, B parameter are deposited in EEPROM2 additional memory units 21 0000～0001 in.Specifically as shown in table 3:
| State value | Memory address | Drive parameter |
| State value 1 | 0000 | A |
| |
0001 | B |
Table 3
Parameter A, B call and read process and above-mentioned embodiment to transfer mode identical, repeat no more herein.For making charge pump more stable in work operational process, as shown in Figure 5, in the present embodiment, the adjustment end Regulator of charge pump 33 is connected with state machine 1, and the driving parameter of this driving circuit 32 comprises: drive positive high voltage charge pump adjust the driving parameters C of parameter (state value 3) and drive negative high voltage charge pump to adjust the driving parameter D of parameter (state value 4).And above-mentioned C, D parameter are deposited in EEPROM2 additional memory units 21 1000～1001 in.Specifically as shown in table 4:
| State value | Memory address | Drive |
| State value | ||
| 3 | 1000 | C |
| State value 4 | 1001 | D |
Table 4
In this embodiment, charge pump 33 is in start-up course, and state machine reading unit 11, according to the charge pump type of current access (in positive high voltage or negative high voltage charge pump a kind of), reads and drives parameter A or B from memory address 0000 or 0001.At charge pump 33, in operational process, if receive the feedback signal of self-adjusting end Regulator, from memory address 1000 or 1001, read and drive parameters C or D, thereby realized the dynamic adjustments for charge pump.Above-mentioned embodiment, while having reduced to access dissimilar charge pump, the replacing to driving circuit.Also can realize charge pump dynamic adjustments in the course of the work simultaneously.
Fig. 6 is the schematic flow sheet of circuit conditioning method in one embodiment of the present invention.As shown in Fig. 1～4 and 5, circuit conditioning method of the present invention, comprises the following steps:
S101: obtain the circuit parameter value under multiple working conditions.According to the running status of outside circuit 3 to be regulated, obtain or arrange the adjusting parameter of this circuit when multiple duty.In above-mentioned embodiment, when outside circuit 3 to be regulated is multichannel charge pump drive circuit, there are four kinds of charge pump openings, respectively corresponding 4 kinds of motivation values.When circuit to be regulated is state machine self, there are 2 kinds of sensitivity amplifier states, respectively corresponding 2 kinds of adjustment of sensitivity parameters.When circuit to be regulated is the driving circuit 32 of positive high voltage or negative high voltage charge pump, corresponding 2 kinds drive parameter.
S102: circuit parameter value prestores in EEPROM2.Additional memory units 21 is set in EEPROM2, if definition address 0000～0100 is additional storage space address.Afterwards, by the circuit parameter value obtaining in above-mentioned steps S101, according to different state values or parameter value, be stored in respectively in above-mentioned additional memory units 21, obtain the table of comparisons of state value, memory address and adjusting parameter (adjustment of sensitivity parameter or driving parameter), make memory address corresponding one by one with state value, specifically as shown in table 1～4 in above-mentioned embodiment.
S103: memory address gets parms.According to outside circuit 3 to be regulated or the current state to be regulated of state machine 1, choose corresponding Parameter storage address.In above embodiment, if in the time of will carrying out " routing unlatching " to multichannel charge pump 31-1,31-2 and 31-3, choose memory address 0010.
S104: carry out parameter according to reading address and read.According to the memory address in step S103, write reading command, and by guiding (or powering on) reading command of this reading command write state machine reading unit 11.After state machine 1 powers on, state machine reading unit 11 these reading command of operation, read the content of the memory address in additional memory units 21.
When outside circuit 3 to be regulated is the driving circuit 32 of positive high voltage or negative high voltage charge pump, in charge pump operational process, charge pump is realized to dynamic adjustments, the adjusting to charge pump parameter, the Primary regulation and the secondary in operational process that are divided into while starting regulate.Corresponding the first separate, stored address and the second separate, stored address while set starting in additional memory units 21, in the operational process of charge pump, if state machine receives charge pump Regulator value of feedback,, from the second separate, stored address 1000～1001, read and drive parameters C or D.Thereby realize the dynamic adjustments that charge pump is in operation.
When circuit 3 to be regulated is the driving circuit of low-voltage electrical apparatus or high temperature electrical equipment, in order to make, above-mentioned to read parameter more accurate, regulates after parameter reading from this memory address, and this is read and regulates parameter to carry out special string pattern verification or CRC check; If this verification is not passed through, again from this memory address, read adjusting parameter, until pass through.
S105: according to reading parameter, outside circuit 3 to be regulated or state machine are carried out to setting parameter.State machine 1 is by the adjusting parameter obtaining in step S104 (adjustment of sensitivity parameter or driving parameter), send to outside circuit to be regulated 3 or state machine inner parameter setting unit 13, outside circuit 3 to be regulated or state machine inner parameter setting unit 13 are realized to adjusting.
By such scheme the present invention by EEPROM(EEPROM (Electrically Erasable Programmable Read Only Memo)) in the parameter to be regulated that prestores, therefore, when circuit need to regulate, by reading of the parameter to be regulated that prestores in the respective stored address to EEPROM, realized the enforcement of integrated circuit has been regulated.Thereby the dirigibility that has improved circuit conditioning, improves the universality of circuit, reduces maintenance and the use cost of circuit.
Above-described is only some embodiments of the present invention.For the person of ordinary skill of the art, without departing from the concept of the premise of the invention, can also make some distortion and improvement, these all belong to the protection domain of invention.
Claims (9)
1. regulating circuit, comprises EEPROM and state machine; In described EEPROM, additional memory units is set, circuit to be regulated or the state machine corresponding adjusting parameter when various states value that prestores in the memory address of this storage unit, makes memory address corresponding one by one with described state value; Described state machine is connected with the reading-writing port of EEPROM, according to the current state value of circuit to be regulated or state machine, choose corresponding memory address, from this memory address, read and regulate parameter to treat regulating circuit according to described adjusting parameter or state machine setting regulates.
2. circuit as claimed in claim 1, described state machine comprises: state machine reading unit, state machine inner parameter setting unit and sensitivity amplifier, described state machine reading unit reads adjusting parameter from described EEPROM, and described state machine inner parameter setting unit regulates described sensitivity amplifier according to described adjusting parameter.
3. circuit as claimed in claim 1, described outside circuit to be regulated comprises: the driving circuit of multichannel charge pump drive circuit, positive high voltage or negative high voltage charge pump.
4. circuit as claimed in claim 3, described additional memory units comprises: the first additional memory units and the second additional memory units.
5. circuit as claimed in claim 4, when described outside circuit to be regulated is the driving circuit of positive high voltage or negative high voltage charge pump, the adjustment end Regulator of the charge pump that drives is connected with state machine, state machine is according to the first current state value of circuit to be regulated, from described the first additional memory units, choose institute's corresponding stored address, from this memory address, read the first adjusting parameter, according to described first, regulate parameter to regulate the driving circuit of positive high voltage or negative high voltage charge pump; If receive Regulator feedback signal, according to the second current state value of circuit to be regulated, from described the second additional memory units, choose institute's corresponding stored address, from this memory address, read the second adjusting parameter, according to described second, regulate parameter to regulate the driving circuit of positive high voltage or negative high voltage charge pump.
6. circuit conditioning method, comprises the following steps:
By circuit to be regulated corresponding adjusting parameter when the various states value, be stored in separate, stored address, make memory address corresponding one by one with described state value;
According to the state value to be regulated of circuit to be regulated, choose corresponding memory address, from this memory address, read adjusting parameter;
According to described adjusting parameter, described circuit to be regulated is regulated.
7. method as claimed in claim 6, described by circuit to be regulated corresponding adjusting parameter when the various states value, the step being stored in separate, stored address comprises:
Corresponding first regulate parameter and second to regulate parameter when the first state value and the second state value respectively driving circuit to be regulated, be stored in respectively in the first memory address and the second memory address.
8. method as claimed in claim 7, according to the state value to be regulated of circuit to be regulated, chooses corresponding memory address, reads and regulate the step of parameter to comprise from this memory address:
According to the first state value of circuit to be regulated, from the first memory address, choose the first adjusting parameter;
If receive the feedback signal of adjusting end Regulator, circuit to be regulated, according to the second state value, is chosen the second adjusting parameter from the second memory address.
9. method as claimed in claim 6, described reading from memory address regulates the step of parameter to comprise:
When circuit to be regulated is the driving circuit of low-voltage electrical apparatus or high temperature electrical equipment, from memory address, read and regulate after parameter, the adjusting parameter that this is read is carried out special string pattern verification or CRC check;
If this verification is not passed through, again from this memory address, read adjusting parameter, until verification is passed through.
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|---|---|---|---|
| CN201310635378.4A CN103631723B (en) | 2013-11-29 | 2013-11-29 | adjusting circuit and circuit adjusting method |
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|---|---|---|---|
| CN201310635378.4A CN103631723B (en) | 2013-11-29 | 2013-11-29 | adjusting circuit and circuit adjusting method |
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| CN103631723A true CN103631723A (en) | 2014-03-12 |
| CN103631723B CN103631723B (en) | 2017-02-01 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107622782A (en) * | 2016-07-14 | 2018-01-23 | 力旺电子股份有限公司 | The drive circuit of nonvolatile memory |
| CN115981683A (en) * | 2023-03-20 | 2023-04-18 | 荣湃半导体（上海）有限公司 | Euse automatic programming circuit |
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| CN102577620A (en) * | 2009-01-14 | 2012-07-11 | 美光工具公司 | Multi-mode portable lighting device |
| CN103385038A (en) * | 2011-01-17 | 2013-11-06 | 美光工具公司 | Multi-mode portable lighting device |
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| US20070016835A1 (en) * | 2005-07-12 | 2007-01-18 | Integrated Device Technology, Inc. | Method and apparatus for parameter adjustment, testing, and configuration |
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| CN107622782A (en) * | 2016-07-14 | 2018-01-23 | 力旺电子股份有限公司 | The drive circuit of nonvolatile memory |
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