Miniaturized TransistorsLado Filipovic, Tibor Grasser What is the future of CMOS? Sustaining increased transistor densities along the path of Moore's Law has become increasingly challenging with limited power budgets, interconnect bandwidths, and fabrication capabilities. In the last decade alone, transistors have undergone significant design makeovers; from planar transistors of ten years ago, technological advancements have accelerated to today's FinFETs, which hardly resemble their bulky ancestors. FinFETs could potentially take us to the 5-nm node, but what comes after it? From gate-all-around devices to single electron transistors and two-dimensional semiconductors, a torrent of research is being carried out in order to design the next transistor generation, engineer the optimal materials, improve the fabrication technology, and properly model future devices. We invite insight from investigators and scientists in the field to showcase their work in this Special Issue with research papers, short communications, and review articles that focus on trends in micro- and nanotechnology from fundamental research to applications. |
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1/f Noise Appl BC-MOSFET behavior bias capacitance carrier cells channel characteristics circuit CMOS compact model computational CrossRef current fluctuation DE-HTFET deposition dopants doping drain current electric field electron mobility enclosed gate layout energy Equation etching processes explicit surface fabrication ferroelectric field-effect transistors Films FinFET flux calculation gate stack gate voltage geometries HfO2 high-K dielectric holes IEEE IEEE Trans impact increases InSe FET interface traps layer leakage current Lett level set lithography material method Microelectron mobility MOSFETs nanowire NC-FET NWFETs oxide parameters particle performance phonon Phys physical piezoelectric polarization poly-Si polysilicon PubMed ray tracing region remote phonon semiconductor SFGST shown in Figure SiGe silicon nanowire single gate layout SiNW SiO2 sparse set structure substrate surface potential surface-potential-based TCAD TFET TFTs Thin-Film Transistors threshold voltage top surface transport tunnel field-effect transistor variability variations Vsub Wang Zhang